june 1998 f dr4420a single n -channel, logic level, powertrench tm mosfet general description features absolute maximum ratings t a = 25 o c unless otherwise noted symbol parameter f dr4420a units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain t current - continuous (note 1a) 11 a - pulsed 40 p d maximum power dissipation (note 1a) 1.8 w (note 1b) 1 (note 1c) 0.9 t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 70 c/w r q jc thermal resistance, junction-to-case (note 1) 20 c/w fdr 442 0 rev.d 11 a, 30 v. r ds(on ) = 0.009 w @ v gs = 10 v, r ds(on ) = 0.013 w @ v gs = 4.5 v. fast switching speed . low gate charge. small footprint 38% smaller than a standard so -8. l ow profile package(1mm thick). power handling capability similar to so-8. the supersot-8 family of n-channel logic level mosfets have been designed to provide a low profile, small footprint alternative to industry standard so-8 little foot type product. these mosfets are produced using fairchild semiconductor 's advanced powertrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance . these devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching. sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 1 5 6 7 8 4 3 2 d s d d s d d g supersot -8 tm pin 1 4420a ? 1998 fairchild semiconductor corporation
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 20 mv / o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j = 5 5c 10 a i gss gate - body leakage current v gs = 20 v, v ds = 0 v 100 na i gss gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -6 mv / o c v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.4 3 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 11 a 0.0075 0.009 w t j =12 5c 0.0125 0.016 v gs = 4.5 v, i d = 9 a 0.01 0.013 i d(on) on-state drain current v gs = 10 v, v ds = 5 v 30 a g fs forward transconductance v ds = 10 v, i d = 11 a 25 s dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 2560 pf c oss output capacitance 560 pf c rss reverse transfer capacitance 280 pf switching ch aracteristics (note 2 ) t d(on ) turn - on delay time v dd = 10 v, i d = 1 a, v gs = 10 v, r gen = 1 w 11 20 ns t r turn - on rise time 15 27 ns t d(off) turn - off delay time 25 40 ns t f turn - off fall time 21 34 ns q g total gate charge v ds = 15 v, i d = 9.3 a, v gs = 5 v 23 33 nc q gs gate-source charge 7 nc q gd gate-drain charge 11 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 1.5 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.5 a (note 2 ) 0.7 1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. r q ja shown below for single device operation on fr-4 board in still air. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. fdr 442 0 rev.d b. 125 o c/w on a 0.026 in 2 of pad of 2oz copper. a . 70 o c/w on a 1 in 2 pad of 2oz copper. c . 135 o c/w on a 0.005 in 2 of pad of 2oz copper.
fdr 442 0 rev.d 0 0.4 0.8 1.2 1.6 2 0 8 16 24 32 40 v , drain-source voltage (v) i , drain-source current (a) 3.5v 4.0v 4.5v ds d v =10v gs 6.0v 3.0v 2.5v 0 8 16 24 32 40 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance v = 3.0v gs d r , normalized ds(on) 10 6.0 5.0 4.5 3.5 4.0 typical electrical characteristics figure 1. on-region characteristics . figure 2. on-resistance variation with drain current and gate voltage . -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 t , junction temperature (c) drain-source on-resistance j v =10v gs i = 11a d r normalized ds(on) figure 3. on-resistance variation with temperature . 1 1.5 2 2.5 3 3.5 4 0 10 20 30 40 50 v , gate to source voltage (v) i , drain current (a) 25c 125c v = 10v ds gs d t = -55c j figure 5 . transfer characteristics. 2 4 6 8 10 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 v ,gate-source voltage (v) drain-source on-resistance i = 5.5a d gs r ,( ohm ) ds(on) t = 125 c a o 25 c o figure 4 . on resistance variation with gate-to -source voltage. 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 5 40 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c j 25c -55c v =0v gs sd s figure 6 . body diode forward voltage varia tion with source current and temperature.
fdr 442 0 rev.d typical electrical characteristics (continued) figure 9 . maximum safe operating area. 0 10 20 30 40 50 60 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i = 11a d v = 5v ds 15v 10v figure 7 . gate charge characteristics . 0.1 0.2 0.5 1 2 5 10 30 50 0.01 0.03 0.1 0.3 1 5 20 100 v , drain-source voltage (v) i , drain current (a) ds d 1s 100ms 10s 10ms rds(on) limit 1ms 100us dc v = 10v single pulse r = 135c/w t = 25c gs a q ja figure 10 . single pulse maximum power dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 135c/w q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 r(t), normalized effective figure 11 .transient thermal response curve . thermal characterization performed using the conditions described in note 1c . transient thermal response will change depending on the circuit board design. 0.1 0.3 1 3 10 30 200 500 1000 2000 3000 5000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0v gs c oss c rss figure 8 . capacitance characteristics . 0.0001 0.001 0.01 0.1 1 10 100 300 0 10 20 30 40 50 single pulse time (sec) power (w) single pulse r = 135c/w t = 25c q ja a
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